RW1E015RPT2R
￥3.10
MOSFET P-CH 30V 1.5A WEMT6
| 參數(shù)名稱 | 參數(shù)值 |
|---|---|
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 6-WEMT |
| Package / Case | 6-SMD, Flat Leads |
新聞資訊
ROHM Semiconductor 單 FET、MOSFET 產(chǎn)品 RW1E015RPT2R
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